Growth of undoped and Te doped InSb crystals by vertical directional solidification technique

Growth and morphology of undoped and doped polyacetylene thin films

2014 Very thin films were studied by means of transmission electron microscopy. On undoped films, the existence of nascent microfibrils was pointed out. Elsewhere the effects of doping with iodine, SbF5 and MoCl5 were studied. Revue Phys. Appl. 19 (1984) 187-190 MARS 1984 Classification Physics Abstracts 81.20S Tome 19 No 3 MARS 1984

Growth of CsI(Tl) crystals doped with Ca and Tm and investigation of its scintillation characteristics

In this work, the growth of CsI(Tl) crystals as gamma detector was performed using vertical Bridgman method with Ca and Tm co-dopants. For evaluation of the growth crystals, X-Ray Diffraction (XRD), photoluminescence and thermoluminescence spectra as well as recorded gamma spectra were employed. In addition, the scintillation properties including energy resolution, scintillation decay time, abs...

InAs-mediated growth of vertical InSb nanowires on Si substrates

In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-dro...

Growth and Characterization of Doped CaF2 Crystals

GROWTH OF ZnS SINGLE CRYSTALS BY CVT TECHNIQUE UNDER DIFFERENT MASS TRANSPORT STABILITY CONDITIONS

Abstract: A thermodynamic model was used to find out the optimum temperature for the growth of ZnS single crystals in closed ampoules by chemical vapor transport technique. Based on this model 1002 °C was found to be optimum temperature for 2 mg/cm3 concentration of transporting agent (iodine). ZnS Crystals were grown in optimum (1002 °C) and non-optimum (902 °C and 1102 °C) temperatures. The c...